论文导读｜15 kV SiC MOSFET: An Enabling Technology for Medium……
Published in
Volume: 2, Issue: 2, 2017
15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers
Due to much higher achievable blocking voltage and faster switching speed, power devices based on wide bandgap (WBG) silicon carbide (SiC) material are ideal for medium voltage (MV) power electronics applications. For example, a 15 kV SiC MOSFET allows a simple and efficient two-level converter configuration for a 7.2 kV solid state transformer (SST) for smart grid applications. Compared with multilevel input series and output parallel (ISOP) solution, this approach offers higher efficiency and reliability, reduced system weight and cost by operating at medium to high switching frequency. However, the main concern is how to precisely implement this device in different MV applications, achieving highest switching frequency while maintaining good thermal performance. This paper reviews the characteristics of 15 kV SiC MOSFET and offers a comprehensive guideline of implementing this device in practical MV power conversion scenarios such as AC-DC, DC-DC and AC-AC in terms of topology selection, loss optimization and thermal management.
Alex Q. Huang
FREEDM Systems Center, North Carolina State University, Raleigh, US
Qianlai Zhu
FREEDM Systems Center, North Carolina State University, Raleigh, US
Li Wang
FREEDM Systems Center, North Carolina State University, Raleigh, US
Liqi Zhang
FREEDM Systems Center, North Carolina State University, Raleigh, US
15 kV SiC MOSFET, efficiency, medium voltage, medium voltage power electronics, reliability, solid state transformer, smart transformer
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Special Issue on Robust and Reliable Power Electronics
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